data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 GBJ20005 thru gbj2010 20a glas s passivated bridge rectifier fe a t ures ?e glass pa ssiv a ted die con s truction ?e high ca se diele c tric s t reng th of 150 0vrms ?e l o w re v e rse le akage curren t ?e surge ov erload rating to 240a pea k ?e ideal for prin ted circui t boa r d a ppli c ati ons ?e plasti c ma terial - ul flammability classi fi cati on 9 4 v- 0 ?e ul li sted under recogni zed comp onent index , file number e94661 ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e c a se : m o lde d pl asti c ?e termina l s: plate d lead s, sol derabl e per mil-std-202, me thod 208 ?e polari ty : molded on body ?e mou n ting : throu gh hole for #6 s c re w ?e m o un t i n g t o r q u e : 5. 0 i n - l bs m a xi m u m ?e w e i ght: 6.6 gram s ( approx ) ?e mar k ing : ty pe number maximu m ra tin g s an d electric a l charac teristic s @ t a = 25 x c unless ot her w ise speci fied gbj di m min ma x a 2 9 . 7 0 3 0 . 3 0 b 1 9 . 7 0 2 0 . 3 0 c 1 7 . 0 0 1 8 . 0 0 d 3 . 8 0 4 . 2 0 e 7 . 3 0 7 . 7 0 g 9 . 8 0 1 0 . 2 0 h 2 . 0 0 2 . 4 0 i 0 . 9 0 1 . 1 0 j 2 . 3 0 2 . 7 0 k 3.0 x 45 l 4 . 4 0 4 . 8 0 m 3 . 4 0 3 . 8 0 n 3 . 1 0 3 . 4 0 p 2 . 5 0 2 . 9 0 r 0 . 6 0 0 . 8 0 s 1 0 . 8 0 1 1 .20 a ll d i men s io n s in mm single p hase , 60hz, re si stiv e or indu cti v e load. for cap a ci tiv e load, dera t e curr ent by 20%. characterist i c s y m bol gbj 20005 gbj 2001 gbj 2002 gbj 2004 gbj 2006 gbj 2008 gbj 2010 uni t peak repet i tiv e r e v e rse volt age w o r k i n g p e ak re ve r s e v o l t a g e dc bl ocki ng vo l t age vrrm vr w m vr 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 v rm s re ve r s e v o lta g e vr(rms) 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v a ver age forw a r d recti f ied output cur r e nt @ tc= 1 0 0 j i o 2 0 a non-repeti ti v e pe ak for w a r d su r g e cur r e nt, 8 . 3 ms s i ngl e hal f-si n e- w a v e su per i mposed on r a ted l o ad (jedec method) i f s m 2 4 0 a forw a rd voltage per e l em ent @ if =10 a v f m 1 . 0 5 v peak rev e rse current @tc = 25 j at rated dc b l ock i ng vol t age @ tc = 125 j ir 10 500 g a i 2 t rati ng fo r fusing (t < 8. 3 m s) (note 1) i 2 t 2 4 0 a2s t y pi cal juncti on capaci tan ce pe r e l ement (note 2) c j 6 0 pf t y pical therma l r esistance , junct i o n to case (note 3) r _ j c 0 . 8 j /w oper ati ng and sto r age tempe r atur e range tj, tstg -65 to +150 j notes: 1. non-repe titiv e , fo r t > 1ms an d < 8 . 3 ms. 2. mea s ure d a t 1.0 mhz and applie d re v e rse v o ltage of 4 . 0 v dc. 3. thermal re si sta n c e from jun c tio n to case pe r eleme n t. unit moun ted on 30 0 x 300 x 1.6mm al uminum pla t e h eat sin k . _ b c d ee g h k j i l m n p r s a
http://www.yeashin.com 2 rev.02 20120305 GBJ20005 thru gbj2010 device characteristics 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 2.0 v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics ( per element ) f i , instantaneous for ward current (a) f 100 50 1 10 100 i , peak for ward surge current (a) fsm number of cycles at 60 hz fi g . 3 maximum non-repetitive sur g e current 150 2 5 0 0 200 1 1 10 100 c , junction cap acitance (pf) j v , reverse voltage (v) fi g .4 t y pical junction capacitance r 02040 6080 100 120 140 i , instantaneous reverse current (a) r percent of rated peak reverse voltage (%) 5
|
